Gate drive circuit
US5434527A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 25, 1993 |
| Grant date | Jul 18, 1995 |
| Priority date | — |
| Expiry date | Oct 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/691
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit includes a high voltage energy source, a power transistor having a drain connected to the energy source and a source connected to a load, and a first capacitor connected between the power transistor gate and source. Also included is a first P-channel transistor connected in parallel with the first capacitor, and a second capacitor connected between the first P-channel transistor gate and drain. A transformer delivers positive voltage to the first capacitor to bias the power transistor ON, and delivers negative voltage to the second capacitor to bias the first P-channel transistor ON, which causes the energy stored in the first capacitor to discharge; thereby biasing the power transistor OFF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.