Temperature measurement using ion implanted wafers
US5435646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1993 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Nov 9, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The value of an unknown test temperature is measured by heating a test wafer (58) to the unknown temperature, measuring the surface electrical resistivity of the test wafer (58), and determining the value of the unknown temperature from the measured surface electrical resistivity. The test wafer (58) is prepared by providing an initial wafer (50), first ion implanting the initial wafer (50) with a first dose of an ionic species, and annealing the ion implanted initial wafer (50) at an annealing temperature. The preparation is completed by second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.