Method of plasma etching
US5435886A · kind A · utility
28Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | May 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.