Method of producing semiconductor laser
US5436196A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 5, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Oct 5, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
PA1 In a method of fabricating a semiconductor laser, a laminated layer structure including a double heterojunction, having an active layer sandwiched by an upper and a lower cladding layer, is formed on a semiconductor wafer. An insulating film is formed with a pattern including a first to-be-processed region corresponding to respective chip regions including a ridge formation region and a second to-be-processed region corresponding to edge regions of the respective chip regions. Apertures are formed in the insulating film at both sides of the ridge formation region of the laser element at the first to-be-processed region having a large insulating film aperture ratio and at the light emitting facet formation region of the laser element at the second to-be-processed region having a small insulating film aperture ratio. The semiconductor layers exposed through the insulating film apertures are etched with a chemically reactive gas having an increased etching speed at a smaller insulating film aperture ratio. Therefore, the active layer is not exposed at both sides of the ridge and the characteristics of the laser element are not deteriorated due to the deterioration of the semicondu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.