Infrared detector local biasing structure and method
US5436450A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Jan 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N15/10
Abstract
In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the in…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.