Semiconductor laser diode
US5436466A · kind A · utility
8Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1993 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Aug 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/321
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.