High performance gaas devices and method
US5436499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Mar 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical and lateral, between closely packed active devices. Essentially, the GaAs devices include a substrate on which is formed, preferably by epitaxial growth or by ion implantation, an active GaAs, or AlGaAs region incorporating, by appropriate doping, the simultaneously therein formed active segments. The active segments are electrically shielded by providing insulating stratums in the active GaAs, AlGaAs region surrounding the active segments. Preferably, the insulating stratums are formed therein by implanting arsenic ions therein so as to form arsenic precipitates. Preferably, a passivated surface layer also is formed in part of the surface of the GaAs, AlGaAs active layer, also preferably by implanting arsenic ions therein. Following implantation, the GaAs, AlGaAs devices are annealed in a reactor preferably at a temperature of about 600.degree. C. in an arsine ambient gas for a period of about 10 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.