Semiconductor laser device
US5436924A · kind A · utility
5Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 5, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Aug 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Successively formed on an n-type InP substrate are an n-type InP first clad layer 1, an undoped GainAsP first light guide layer 11, an active layer 3 of the multiple quantum well structure arranged with the number of wells being 5 to 10 and the radiation wavelength being about 1.3 .mu.m, an undoped GainAsP second light guide layer 12, and a p-type InP clad layer 2, which are processed to constitute a mesa-type active region. The width of the active layer 3 is not less than 0.7 .mu.m and not more than 1.0 .mu.m, whereby the spectral width can be made not more than 2.5 nm in the temperature range of -45.degree. to +85.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.