Charge transfer apparatus
US5436949A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Nov 2, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/285
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a charge transfer apparatus. A reset gate (RG) is formed of an N-channel MOSFET of depletion type in which a carrier concentration of a channel region is set in a range from 10.sup.15 to 5.times.10.sup.16 cm.sup.-3. Also, a circuit for generating a reset pulse that is supplied to the reset gate (RG) is constructed as follows. A drain voltage source (12) and a drain of a transistor (Tr) are connected via a junction (a), and two resistors (R1) and (R2) are connected in series between the anode of the drain voltage source (12) and the ground. A junction (b) between the resistors (R1) and (R2) and the reset gate (RG) are connected together via an input line (13) and a high resistance (Rh) is inserted into the input line (13). Further, a coupling capacitor (Cc) is connected between a clock pulse input terminal (.phi.in) and the input line (13). Thus, an amount that a potential formed under the reset gate is fluctuated by a fluctuation of an amount of implanted impurities and a fluctuation of a drain voltage can be reduced and hence a stable reset operation can be carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.