Apparatus and method for chemical vapor deposition of diamond
US5437728A · kind A · utility
2Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Dec 27, 1994 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Dec 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Diamond is produced by chemical vapor deposition on a substrate by hot filament activation of a hydrogen-hydrocarbon gas mixture. An edge of the substrate faces the filament at a distance therefrom up to about 1 mm and preferably about 0.3-0.7 mm., and the substrate is moved relative to the filament to maintain this spacing as diamond forms thereon. Diamond formation proceeds at an improved rate, and in single crystal configuration under certain conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.