Chemical vapor deposition of polycrystalline diamond with <100> orientation and <100> growth facets
US5437891A · kind A · utility
3Cited by
3References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 23, 1994 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Jun 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition of diamond with <100> orientation and (100) growth facets is performed at an increased growth rate and affords cubic diamond crystals when a gas mixture comprising hydrogen, a hydrocarbon such as methane and specific minor amounts of oxygen and an inert gas, preferably predominantly nitrogen, is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.