Method of fabricating capacitor element in super-LSI
US5438012A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1993 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Aug 5, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A capacitor element of a semiconductor device used for a super-LSI is formed by the steps including (a) removing a natural oxide film on a surface of a lower electrode of polysilicon, (b) forming on the surface of the lower electrode an impurity-doped tantalum oxide film, and (c) forming an upper electrode with at least a bottom thereof constituted by titanium nitride. The steps may further include (d) nitriding the surface of the lower electrode after the removal of the natural oxide film, and (e) densifying the tantalum oxide film by way of a high temperature heat treatment after the formation of the tantalum oxide film. In this way, it is possible to reduce thickness of a capacitive insulating film and to form the capacitor element in which the leakage current characteristics are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.