Power MOSFET

US5438215A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Mar 25, 1994
• Grant date: Aug 1, 1995
• Expiry date: Mar 25, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/307

Abstract

A power MOSFET includes a semiconductor body having first and second surfaces. An inner zone of a first conduction type has a given dopant concentration. At least one base zone of a second conduction type is adjacent the inner zone and the first surface. At least one source zone is embedded in the at least one base zone. At least one drain zone is adjacent one of the surfaces. Additional zones of the second conduction type are disposed in the inner zone inside a space charge zone developing when a blocking voltage is present. At least one additional zone of the first conduction type is disposed between the additional zones of the second conduction type and is doped higher than the inner zone. The additional zones have a dopant level and the additional zones of the second conduction type are mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.