Semiconductor device with Shottky junction
US5438218A · kind A · utility
Inventors
Key dates
| Filing date | Apr 30, 1993 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Apr 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is provided adjacent to the semiconductor region having an aperture therein, and an electrode region is provided in the aperture. A third semiconductor region comprising a p-type semiconductor is provided at a junction between the insulation film and the electrode region. The electrode comprises a monocrystalline metal and constitutes a Schottky junction with the semiconductor region. An ohmic electrode comprising aluminum is arranged on the electrode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.