Semiconductor dynamic random access memory cell free from leakage between accumulating electrode and counter electrode
US5438541A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 1994 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Sep 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
Abstract
A storage capacitor incorporate in a semiconductor dynamic random access memory cell has an accumulating electrode of p-type polysilicon electricaly conencted to an n-type drain region of an associated switching transistor, a dielectric film structure covering the accumulating electrode and a counter electrode opposed through the dielectric film structure and formed of a p-type polysilicon, and the dielectric film structure is thinner than a critical thickness for a direct tunneling current by virtue of the wide potential barrier between the dielectric film structure and the p-type polysilicon and the Fermi level of the p-type polysilicon falling into the forbidden band of the other p-type polyslicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.