Semiconductor laser with optimum resonator
US5438583A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1993 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Dec 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating layer; a current blocking layer provided in contact with both sides of the activating layer; a first electrode electrically connected to the first cladding layer; and a second electrode electrically connected to the second cladding layer. The activating layer has a structure that the activating layer is two-dimensionally confined within the first cladding layer, the second cladding layer, and the current blocking layer, reflectivity of at least on end face of a resonator of the activating layer is less than, or equal to 5%, and loss in the resonator of the activating layer is higher than, or equal to 100 cm.sup.-3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.