Rotation rate sensor
US5438870A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1993 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Dec 30, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5755
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A rotation rate sensor has a multi-layer structure including a monocrystalline silicon layer (10) which forms a carrier structure and a polysilicon layer (21), forming a second layer, and which includes a structural element (30) which acts as an oscillatory body. This structural element (30) is supported on the carrier structure (10) by a plurality of support strips (31), and is deflectable (2) perpendicularly to the major surface of the carrier structure (10). Capacitative or piezo-resistive detecting elements are formed from the second layer for detecting Coriolis force deflections (2), perpendicular to the major surface of said carrier (10) of the structural element (30).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.