Controlled etching of oxides via gas phase reactions
US5439553A · kind A · utility
294Cited by
17References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Mar 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.