Method for producing a silicon technology transistor on a nonconductor
US5439836A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 13, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Jul 13, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
Abstract
Method for producing a silicon technology transistor on a nonconductor. This method consists in particular of forming a thin film of silicon (6) on a nonconductor (4) and then a mask (8, 10) including one opening (13) at the location provided for the channel (26) of the transistor; of locally oxidizing (14) the unmasked silicon to form an oxidation film; of eliminating the mask; of forming source (18) and drain (20) regions in the silicon by ion implantation with the oxidation film being used to mask this implantation; of eliminating the oxidation film; and of forming a thin gate nonconductor between the source and the drain and then forming the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.