Method of making artificial layered high T.sub.c superconductors
US5439876A · kind A · utility
77Cited by
2References
20Claims
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Key dates
| Filing date | Aug 16, 1993 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Aug 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/857
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.