Planar type image sensor having electrodes on a photoelectric conversion layer
US5440149A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Apr 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An image sensor of a planar type is so arranged that a photo electric conversion layer is provided on an insulating substrate, a pair of electrodes are provided on the photoelectric conversion layer, and a p-type region and an n-type region are provided to the two electrodes respectively at locations at which light incident on a surface of said photoelectric conversion layer is unintercepted. On the photo electric conversion layer, there is a transparent protective layer but there is no p.sup.+ -type layer or a transparent electrode. The quantum efficiency and the blocking capability are enhanced with the leakage current being reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.