Electrostatic discharge protection device for MOS integrated circuits
US5440151A · kind A · utility
20Cited by
9References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Sep 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
The protection device comprises a MOS transistor formed on the substrate of the integrated circuit and connected between a circuit pad and a reference terminal of the integrated circuit. A thyristor formed on the substrate is connected between the pad and the reference terminal. The control electrode of this thyristor consists of a region of the substrate in such a way that the thyristor can be triggerred by a current of charge carriers produced in the substrate by avalanche when a voltage rise occurs between the substrate and the drain of the MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.