MOS/bipolar device
US5440164A · kind A · utility
10Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Apr 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
Abstract
An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.