Method and circuitry for storing discrete amounts of charge in a single memory element
US5440505A · kind A · utility
204Cited by
13References
56Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Jan 21, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.