Patent · US Expired

Zero power high speed programmable circuit device architecture

US5440508A · kind A · utility

19Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 1994
Grant dateAug 8, 1995
Priority date
Expiry dateFeb 9, 2014

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C14/0063
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A non-volatile, low, and zero power, high speed self-sensing programmable device and architecture including a non-volatile self-sensing cell. The non-volatile self-sensing cell is connected out of the speed path of the programmable device, permitting rapid, non-volatile programming and reading operations to be conducted. According to one version, two self-sensing cells are provided with a means for selecting one of the cells for programming or read operation. Each non-volatile self-sensing cell includes a latch having cross-coupled, pull-up transistors and non-volatile pull-down cells. The cross-coupled pull-up transistors are field effect transistors having gates which are connected to the opposite sources of the cross-coupled pull-up transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.