Sputtering apparatus for making high temperature superconducting oxide films
US5441623A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 3, 1994 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Jan 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/731
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for making high temperature superconducting oxide films comprising using a sintered body of Y--Ba--Cu--O or Bi--Sr--Ca--Cu--O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y--Ba--Cu--O is 90 K. and that of Ba--Sr--Ca--Cu--O is 80 K. An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.