Patent · US Expired

Method of forming conductive interconnect structure

US5441914A · kind A · utility

62Cited by

10References

22Claims

0Family size

Assignee

Motorola, Inc. · US

Inventors

Robert C. Taft · Munich, DE
Craig D. Gunderson · Austin, US
Arkalgud R. Sitaram · Cupertino, US

Key dates

Filing date	May 2, 1994
Grant date	Aug 15, 1995
Priority date	—
Expiry date	May 2, 2014

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/012
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, delamination of a patterned silicon nitride anti-reflective layer (26) from an underlying patterned tungsten silicide layer (32), is prevented by forming a thin silicon layer (30) between the patterned tungsten silicide layer (32) and the overlying patterned silicon nitride anti-reflective layer (26).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.