Isotopically enriched semiconductor devices
US5442191A · kind A · utility
42Cited by
5References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 5, 1994 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Jul 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure including a single-crystal region composed of an isotopically enriched material, wherein the isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon; and a semiconductor device formed by using said isotopically enriched semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.