Diamond hetero-junction rectifying element
US5442199A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1993 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | May 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
Abstract
An undoped highly-oriented diamond film is formed on a single crystalline silicon substrate, a p-type highly-oriented diamond film is formed on the insulating diamond film. An ohmic electrode is formed on said p-type semiconducting diamond film and an ohmic electrode is also formed on a n-type .beta.-SiC layer. The highly-oriented diamond films are grown by chemical vapor deposition and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystals simultaneously satisfy the following relations: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline.5.degree. between adjacent crystal planes. The diamond hetero-junction rectifying element thus made has a high rectification ratio and heat resistance, and is suitable for mass production at low cost and on large scale.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.