Hall effect sensor
US5442221A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1993 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | May 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
Abstract
A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the whole thickness of the carrier injection layer less than 5.times.10.sup.12 cm.sup.-2, an insulating burial layer deposited on the carrier injection layer, having a conduction band with an energy level greater than the Fermi energy of the sensor and a thickness greater than 200 .ANG.. Applicable to the field of electricity meters and current sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.