Bipolar transistor having an emitter electrode formed of polysilicon
US5442226A · kind A · utility
18Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1993 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Apr 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
In a semiconductor device, an emitter electrode has a polysilicon layer provided in a first contact hole and on a first insulating film. The polysilicon layer is in contact with an emitter region and is covered with a metal layer. A second contact hole is provided on a part of a second insulating film located on a substantially flat portion of the metal layer. A third contact hole is provided in those portions of the first insulating film and a second insulating layer which are located on a base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.