Semiconductor device having a low permittivity dielectric
US5442237A · kind A · utility
54Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1994 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Feb 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semicondutor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18, 18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18, 18').
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.