Method and apparatus for forming thin film and multilayer film
US5443646A · kind A · utility
327Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Oct 12, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film is formed on a substrate in a reaction chamber using a photo CVD technique by decomposing a reactive gas supplied to the reaction chamber by means of light irradiated through a light introducing window. The reduction in film deposition rate due to clouding of the light introducing window is corrected in order to form a thin film of a desired film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.