SOI (silicon on insulator) substrate with enhanced gettering effects
US5443661A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon substrate, a silicon oxide island film is partially provided in a polycrystalline silicon film, and a second single crystal silicon substrate is provided on an entire upper surface of the polycrystalline silicon film. An element isolation trench extends from an upper surface of the second single crystal silicon substrate to an upper surface of the first single crystal silicon substrate, and a silicon oxide film is buried in the element isolation trench. The SOI substrate thus constituted has a high gettering effect for heavy metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.