Plasma CVD apparatus and processes
US5443686A · kind A · utility
354Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1992 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Jan 15, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes for producing and using a novel CVD apparatus for depositing silicon layers onto suitable substrates and for the in-situ etching removal of background silicon deposits from the interior walls of the apparatus. The invention comprises using an apparatus having a fused quartz reaction chamber and precoating the interior wall of the reaction chamber with a thin continuous barrier layer of Al.sub.2 O.sub.3 which is inert to the etching gas introduced for the removal of the background silicon deposits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.