Dry etching process utilizing a recessed electrode
US5443689A · kind A · utility
23Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Feb 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/004
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus is provided with parallel electrodes confronting each other, and a high frequency voltage is impressed between the electrodes. The electrode for holding a base material has a recess in its surface and the surface of the electrode is covered with an insulating layer so that part of the structure constituted by the insulating layer and electrode is not in contact with the base material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.