Photodetector comprising avalanche photosensing layer and interline CCD readout layer
US5444280A · kind A · utility
6Cited by
19References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 20, 1993 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Dec 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally referred to as avalanche photo-diodes, on top of a typical prior-art charge coupled device structure. The disclosed arrangement is a hybrid of these two technologies with certain provisions which allow the two prior art technologies to function properly as a single integrated unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.