Semiconductor memory device with stack type memory cell
US5444653A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Apr 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.