Method for producing high density sintered silicon nitride (Si.sub.3 N.sub. 4
US5445776A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1991 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Dec 31, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/5935
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4, above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.