Semiconductor laser diode and method for manufacturing the same
US5445993A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1993 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | May 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
Abstract
A semiconductor laser diode includes a semiconductor substrate, an active layer having a double hetero structure formed on the semiconductor substrate, a first quantum well layer formed between the active layer and the current confinement layer, a second quantum well layer formed on the active layer corresponding to the current injection groove, and a clad layer having its flat surface formed on the current injection groove and the current confinement layer. A method for manufacturing the semiconductor laser diode includes the steps of forming an active layer having a double hetero structure on the semiconductor substrate, selectively forming a current confinement layer on the active layer to form a current injection groove, forming a clad layer having its flat surface on the current injection groove and the current confinement layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.