Patterning method
US5445997A · kind A · utility
4Cited by
7References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 12, 1993 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Oct 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterning method which comprises forming a photosensitive inorganic semiconductor layer on a semiconductor substrate and irradiating the photosensitive inorganic semiconductor layer which is kept in contact with an electrolyte with light of energy greater than the band gap of the semiconductor layer. Thus, a portion of the semiconductor layer which has been exposed or unexposed to light is dissolved into the electrolyte, thereby producing a desired pattern on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.