Electrode structure and method for anodically-bonded capacitive sensors
US5446616A · kind A · utility
20Cited by
6References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 28, 1994 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Mar 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/43
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing electrode on a glass layer of an anodically-bonded capacitive sensor has an interfacial barrier film containing a nitride compound between the electrode and the glass layer. In one embodiment, the capacitive sensor is an inertial sensor having a sensing element hingedly mounted to a frame which is anodically bonded to the glass layer. The sensing electrode is then located on a surface of the glass layer facing the sensing element. The sensing element and the frame are preferably made of silicon and the interfacial film is preferably silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.