Optoelectronic device
US5446751A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 1992 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Nov 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device includes a first n-type epitaxial layer, an active layer having a second epitaxial layer grown on said first layer and a third epitaxial layer of p-type material in the form of a ridge structure selectively grown on or over the active layer, in which a p-n junction is formed in the active layer between a region of p-type material aligned beneath the ridge, and adjacent n-type regions of the active layer, the underlaying first layer being wholly n-type. A method of fabricating such a device involves growing an all n-type planar, forming a dielectric mask thereon, growing by selective epitaxy the ridge structure of p-type material and simulatneously forming the p-n junction by diffusion thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.