Current block type semiconductor laser
US5446753A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 1994 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Jun 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An object of the present invention is to provide a semiconductor laser with a current block layer formed on an upper clad layer and composed of GaAs so as to securely close the rays of light in horizontal direction. The present invention is a current block type semiconductor laser having a substrate composed of GaAs where the band gap of an activation layer is smaller than that of GaAs, comprising an AlGaInP (the content of Ga may be zero) formed on the GaAs substrate and opposed main cladding layers except for a stripe-shaped current passageway region and a GaAs auxiliary cladding layer formed on the main cladding layer in the stripe-shaped current passageway region surrounded by the current block layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.