Magnetoresistance film and method of manufacturing same
US5447781A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1993 |
| Grant date | Sep 5, 1995 |
| Priority date | — |
| Expiry date | Jul 23, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance film has an artificial lattice film structure having alternating conductive and magnetic layers. The anisotropic magnetic field H.sub.k of the magnetic layers and the anti-ferromagnetic coupling magnetic field H.sub.s between the magnetic layers which face each other through the conductive layers satisfy the relationship H.sub.k <H.sub.s. The conductive layers contain 0.05 to 5 atomic % of at least one material selected from the group consisting of iron, cobalt, and nickel. The thickness d of each conductive layer is selected in the range of 1.02.times.d.sub.max .ltoreq.d.ltoreq.1.10.times.d.sub.max or 0.90.times.d.sub.max .ltoreq.d.ltoreq.0.98.times.d.sub.max. The magnetoresistance is exhibited substantially isotropically in the plane of the layers. The magnetoresistance film has large magnetoresistance prevented from being reduced due to the anisotropy of the magnetic layers, a high sensitivity, and keeps its large magnetoresistance stably. A method of manufacturing such a magnetoresistance film is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.