Method for forming a thin protection film
US5447816A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1991 |
| Grant date | Sep 5, 1995 |
| Priority date | — |
| Expiry date | Sep 9, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a dense, carrier blocking, thin protective film of a hydrogenated amorphous material containing an ingredient to reduce surface wetting on an a-Si:H photosensitive member. The method includes forming the protective film by generating a plasma of a starting gas suitable for forming the hydrogenated amorphous material within a deposition space where the photosensitive member is positioned under vapor deposition conditions. Hydrogen radicals are generated by decomposing hydrogen gas. The quantity of dangling bonds at the surface of the amorphous material film is reduced to thereby increase the density of the film by introducing a sufficient amount of the hydrogen radicals into the deposition space in the proximity of the photosensitive member to cover the surface of the amorphous material film as it forms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.