Pyroelectric thin film infrared sensor and method for fabricating the same
US5448068A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1994 |
| Grant date | Sep 5, 1995 |
| Priority date | — |
| Expiry date | Jun 21, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pyroelectric thin film infrared sensor including a lower Pt electrode disposed on the upper surface of a substrate, a pyroelectric thin film disposed on the upper surface of lower Pt electrode such that its right portion overlaps with a predetermined region of lower Pt electrode, and an upper Cr electrode disposed over the pyroelectric thin film, The lower Pt electrode has a thickness of 150 to 400 .ANG. while the substrate is comprised of an MgO single crystal substrate having (100)-oriented plane, so as to increase the C-axis orientation of the pyroelectric thin film. With such a structure, the pyroelectric thin film exhibits an improvement in infrared ray sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.