Limited current density field effect transistor with buried source and drain

US5448085A · kind A · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Mark C. Calcatera · Bainbridge, US
• Dennis May · London, GB

Key dates

• Filing date: Aug 11, 1994
• Grant date: Sep 5, 1995
• Expiry date: Aug 11, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/161

Abstract

A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating life and reliability of the transistor are improved by the buried source and drain structure which locates necessary regions of high electrical field intensity and large current density well within the body of the transistor. Comparisons of the buried source and drain field effect transistor with the conventional metal semiconductor field effect transistor are disclosed and include current density, electric field intensity, voltage potentials and I-V curve comparisons. A salient steps fabrication sequence for the buried source and drain field effect transistor is also disclosed.