Micro metal-wiring structure having stress induced migration resistance
US5448113A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 2, 1994 |
| Grant date | Sep 5, 1995 |
| Priority date | — |
| Expiry date | Dec 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expansion of the metal wiring is greater than those of the first and the second insulating layers. Intersection lines formed between grain boundaries of the metal wiring and a surface of the first insulating layer is nearly perpendicular to an extending direction of the metal wiring and an angle between grain boundary planes and a line that is perpendicular to a surface of the first insulating layer is greater than 20 degrees. Metal-wiring having a good resistance against stress-induced-migration is obtained by providing when this angle is greater than 20.degree..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.