Field emission device and method of making the same
US5449435A · kind A · utility
12Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1992 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Nov 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a field emission device. A substrate is selectively patterned. An etch is performed to remove portions of the substrate to form protrusions. An oxidation is performed to the substrate that forms a first oxidized layer. A perpendicular etch is performed that removes portions of the first oxidized layer. A second oxidation is performed to the substrate that forms a second oxidized layer. A conductive or semiconductive layer is deposited onto the second oxidized layer. An etch is performed to remove a portion of the first oxidized layer and a portion of the second oxidized layer to expose the protuberance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.